主要规格及技术指标

1.真空腔室: φ350×H350mm;
2.真空系统: 复合分子泵+直联旋片泵+高真空气/电动阀门高真空系统，数显复合真空计;
3.真空极限: 极限真空优于 6.6×10-5Pa(设备空载抽真空 24 小时);
4.漏率: 设备升压率≤0.8Pa/h;
5.抽速: (空载)从大气抽至 5.0×10-3Pa≤15min;
6.基片台尺寸: Φ120mm 范围内可装卡各种规格基片;
7.基片台旋转与加热: 基片旋转:0~20转/分钟; 加热:室温~500±1°C;
8.溅射靶: 2 英寸磁控靶，3 只;叁靶共焦溅射; 兼容直流/射频电源溅射; 标配直流溅射电源 2 台，射频溅射电源 1 台;磁控靶配有气动挡板结构;
9.工作方式: 各靶可独立/顺次/共同工作，采用磁控靶从下向上溅射镀膜;
10.膜厚不均匀性: ≤±5%(基片台Φ75mm 范围内);
11.控制方式: PLC+触摸屏人机界面半自动控制系统;
12.报警及保护: 对泵、电极等缺水、过流过压、断路等异常情况进行报警并执行相应保护措施;完善的逻辑程序互锁保护系统;
13.占地: (主机)L1600mm×W800mm×H1920mm。
14.设备噪音: 噪音≤70dB;
15.设备总重量: 约 700 公斤.

1. vacuum chamber φ350×H350mm;
2. vacuum system Compound molecular pump+ Rotary Vane of Direct Connected Vacuum Pump+High vacuum system of high vacuum air/electric valve, Digital display compound vacuum gauge
3. Vacuum limit the ultimate vacuum is better than 6.6 × 10-5pa (no-load vacuum pumping of equipment for 24 hours);
4. Leakage rate: equipment pressure rise rate ≤ 0.8pa/h;
5. Pumping speed: (no-load) from atmosphere to 5.0 × 10-3Pa≤15min;
6. Substrate stage size: Substrates of various specifications can be loaded within Φ120mm;
7. Substrate table rotation and heating: Substrates rotation: 0 to 20 rpm; heating: ambient temperature to ~500±1°C;
8. Sputtering target: 2-inch magnetron target (3pcs); Three target confocal sputtering; Compatible with DC / RF power source sputter; standard fixture: DC sputtering power supply 2 sets and RF sputtering power supply 1 set; The magnetic control target is equipped with a pneumatic baffle structure;
9. operation mode: each target can work independently/sequentially/jointly;
10. Non uniformity of film thickness: ≤±5% (Substrate stage within Φ75mm);
11. control mode: PLC + touch screen human-machine interface semi-automatic control system;
12. Alarm and protection: Alarm abnormal conditions of the pump and electrode, such as water shortage, overcurrent, overvoltage and open circuit, etc; and implement corresponding protection measures;
13. Space occupation: L1600mm×W800mm×H1920mm (host);
14. Equipment noise: ≤70dB;
15. Total weight: approx. 700kg.

主要功能及特色

JCP350 高真空多靶磁控溅射镀膜机，可单靶独立、多靶轮流和组合向心共溅射; 该设备主要用来开发纳米级单层及多层的金属导电膜(可选配强磁靶镀磁性材料薄膜)、半导体膜以及陶瓷绝缘薄膜等。

JCP350 high vacuum multi-target magnetron sputtering coating machine can be used for single target independent sputtering and multi-target rotation and combined centripetal co sputtering; The equipment is mainly used to develop nano single-layer and multi-layer metal conductive films (optional: strong magnetic target plated magnetic material film), semiconductor films and ceramic insulating films.

主要附件及配置

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