主要规格及技术指标

主要规格及技术指标：
（1）晶圆尺寸：4”及以下圆片;
产量：1~5片/批
（2）成膜种类：(可根据要求配管数量)
第一管：Si3N4 15 nm
第二管: Si02 50 nm
膜厚均匀性：≤±5%
（3）真空系统参数：
• 系统极限真空：≤1Pa；
• 工作压力及精度：100Pa~300Pa，1mTorr；
• 恢复真空时间： AP-10Pa≤5min；
• 系统漏气率：停泵关阀后压力升率≤1 Pa /min；
（4）气路系统：
• 气路系统配置MFC 控制；
• MFC 控制精度≤±1%F.S；
• 气密性漏率≤1X10-8pa.m3/s；
• 管路特性和连接方式：316L 电化学内抛光管道、全 VCR 焊接；
（5）温度控制范围：400℃~1000℃;
（6）恒温区长度：100mm
（7）恒温区精度：≤±0.5℃
（8）单点温度稳定性：≤±1℃/4h (900℃时)；
（9）炉体升温速率：最大升温速率:20℃/分钟，最大降温速率:5℃/分钟；
（10）温度控制方式：三段内外热偶双回路温度控制，自动校温区，具有快速回温功能；
（11）具有自动斜率升降温及恒温功能；
（12）具有超温、断、热偶短路、流偏差报警和保护功能；
（13）送片方式：手动送片;
（14）工艺过程由工业控制计算机进行全自动控制，人机界面友好，可直接在触摸屏上操作，自动记录设备运行数据，工艺数据可根据各个参数图形化显示。

(1) Wafer size: 4 "or less wafer
Output: 1~5 pieces/batch
(2) Type of film forming: (number of pipes can be supplied according to requirements)
First tube: Si3N4 15 nm
Second tube: Si02 50 nm
Film thickness uniformity: ≤±5%
(3) Vacuum system parameters:
• System limit vacuum: ≤1Pa
• Working pressure and accuracy: 100Pa~300Pa, 1mTorr
• Vacuum recovery time: AP-10Pa≤5min
• System air leakage rate: pressure rise rate after pump shutdown ≤1 Pa /min
(4) Gas path system:
• The air circuit system is configured with MFC control
• MFC control accuracy ≤±1%F.S
• Air tightness leakage rate ≤1X10-8pa.m3/s
• Pipeline characteristics and connection: 316L electrochemical internal polishing pipeline, full VCR welding
(5) Temperature control range: 400℃~1000℃
(6) Length of constant temperature zone: 100mm
(7) Precision of constant temperature zone: ≤±0.5℃
(8) Single point temperature stability: ≤±1℃/4h (900℃)
(9) Furnace heating rate: maximum heating rate: 20℃/ min, maximum cooling rate: 5℃/ min
(10) Temperature control mode: three internal and external thermocouple double circuit temperature control, automatic temperature calibration area, with fast temperature return function
(11) With automatic slope rise and cooling and constant temperature function
(12) With over temperature, break, thermocouple short circuit, flow deviation alarm and protection functions
(13) Feeding mode: manual feeding
(14) The process is automatically controlled by the industrial control computer with friendly man-machine interface. It can be operated directly on the touch screen and automatically record the operation data of the equipment. The process data can be graphically displayed according to various parameters.

主要功能及特色

主要功能及特色：
主要用于集成电路圆片制造中生长多层布线层间绝缘膜(Si02 膜)、电容器介质膜 (Si3N4 膜) 和栅电极材料(Poly-Si 膜 )的制备。
设备采用先进的控温技术实现高精度控制温度，提高片内均匀性，可根据用户设定的工艺流程实现自动升温、恒温、成膜、降温等过程，可满足工艺对升降温速率、控温精度及气氛保护等的要求，具有控温精度高、炉体寿命长、产量大、自动化程度高、人机操作界面友好、安全性和可靠性高等特点，在半导体、集成电路、电力电子等领域内都有着非常广泛的应用。
It is mainly used for the preparation of multi-layer wiring interlayer insulation film (Si02 film), capacitor dielectric film (Si3N4 film) and gate electrode material (Poly-Si film) in integrated circuit wafer manufacturing.
The equipment adopts advanced temperature control technology to achieve high precision temperature control, improve the uniformity of the chip, according to the user-set process to achieve automatic heating, constant temperature, film formation, cooling and other processes, can meet the process of rising and cooling rate, temperature control precision and atmosphere protection requirements. It has the characteristics of high temperature control precision, long life of furnace, large output, high degree of automation, friendly man-machine operation interface, high safety and reliability, and has a very wide range of applications in semiconductor, integrated circuit, power electronics and other fields.

主要附件及配置

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