主要规格及技术指标

简规：4 英寸，500℃腔体，4 路液源，预留 2 路。
1）反应腔系统： 4 英寸双腔腔体 ；
2）反应模式：“快速沉积模式”（适用于平面基底）、“充分暴露模式”
（专用于 3 维结构材料、粉末基底）、“掺杂模式”（如 AZO 制备）；
3）前驱体输送系统：高配 4 路自清洗；含自伴热 Swagelok ALD 阀门
（≤200℃，精度±1℃，开启时间 ms），水及其它 3 路源，配备已验证的成熟标准工艺； 载气：高纯氮气/氩气；
4）真空系统：Inficon 压力传感、真空泵；
5）电气温控系统：PLC 控制，全系统部件及管路采用第三代可拆卸式
加热保温套（≤250℃，精度≤±1℃）；
6）配备触摸屏外设；
7）粉末夹具（可选）；

Simplified Specifications:
Size: 4 inches
Chamber Temperature: 500°C
Liquid Sources: 4 channels, with 2 reserved
Reaction Chamber System: 4-inch dual-chamber design.
Reaction Modes:
Rapid Deposition Mode: Suitable for planar substrates.
Full Exposure Mode: Specifically designed for 3D structured materials and powder substrates.
Doping Mode: For applications such as AZO preparation.
Precursor Delivery System:
High-end 4-channel self-cleaning system.
Includes self-heating Swagelok ALD valves (≤200°C, accuracy ±1°C, ms-level opening time).
Water and 3 other sources, equipped with verified and mature standard processes.
Carrier Gas: High-purity nitrogen/argon.
Vacuum System: Inficon pressure sensors and vacuum pump.
Electrical Temperature Control System:
PLC-controlled.
All system components and pipelines use third-generation detachable heating insulation jackets (≤250°C, accuracy ≤±1°C).
Touchscreen Peripheral: Included.
Powder Fixture: Optional.

主要功能及特色

沉积参数（厚度，成份和结构）高度可控，优异的沉积均匀性和一致性。
主要功能为用于沉积单原子层超薄膜的气相沉积设备。通过精确控制媒质的流量以及使用清除媒质，保证了一次只沉积一层指定要求的单原子层超薄膜。
可以用于沉积氧化物、氮化物、贵金属等薄膜材料。

The deposition parameters (thickness, composition, and structure) are highly controllable, with excellent deposition uniformity and consistency.
The primary function is a vapor deposition equipment used for depositing ultra-thin films at the single atomic layer level. By precisely controlling the flow of media and using purging media, it ensures the deposition of only one single atomic layer of the specified requirement at a time.
It can be used to deposit thin film materials such as oxides, nitrides, and precious metals.

主要附件及配置

Plasma System
Equipped with a visual observation window.
Power: 1000 W.
Frequency: 13.56 MHz.
Output Power: Rated power 1 ~ 100%, continuously adjustable, with forward and reverse power displayed on a VFD.
Gas Channels: 2 plasma gas channels (options include oxygen, ammonia, hydrogen, and nitrogen), and 1 carrier gas channel.
Piping System: Includes ALD-specific diaphragm valves, manual shut-off valves, mass flow meters, and related piping.
Plasma Gas Source: Independent gas inlet.

等离子体系统
1) 配备可视观察窗；
2) 功率：1000 W；
3) 频率：13.56 MHz；
4) 输出功率：额定功率 1 ~ 100% ，连续可调，正反向功率 VFD 显示
5）2 路等离子体气路（氧气、氨气、氢气和氮气可选），1 路载气；
6）管路包括 ALD 专用隔膜阀、手动截止阀、质量流量计及相关管路；
7）等离子体气源为独立进气口。