主要规格及技术指标

3.1 真空反应室：提供工艺过程中的真空环境，包括阀门、内衬、静电卡盘、真空计、真空开关等；
腔室本底真空 < 0.5 mT
腔室漏气率 < 1.0 mTorr/min
工艺控压范围 5~85 mTorr Inficon
控压能力 2mT@50sccm Ar（不启辉状态）
工艺控压精度 0.1 mTorr
下电极温度范围 -20~90℃
下电极控温精度 ±0.5 ℃
衬底类型 Si 衬底
Wafer 尺寸 6 寸大平边 57.5mm
ESC 配置 6 寸大平边 ESC 套件
ESC 吸附电压 10kV

3.2 等离子体系统：提供并控制射频能量发生，通过感应耦合在工艺腔室内产生并维持等离子体，包括等离子体源、全自动匹配器等；
ICP Generator 1500W，13.56MHz
上电极可用功率范围 150~1200W
Bias Generator 300W，13.56MHz
下电极可用功率范围 1~260W
匹配稳定时间 < 3 s
射频精确度 ±1% 设定值或 ±5W（设定值>500W）
反射功率 <3W（5-100W）或 3%设定值（设定值>100W）

3.3 气路输送系统：提供工艺气体，包括 MFC、气动阀门等；
气路 气体 流量（sccm）
Gas1 Ar 200
Gas2 O2 200
Gas3 He 200
Gas4 N2 200
Gas5 CF4 200
Gas6 SF6 200
Gas7 Cl2 200
Gas8 BCl3 (伴热) 200
Gasbox 漏气率 < 0.5 mTorr/min

3.4 排气系统：用于反应副产物的排出，包括摆阀、分子泵、干泵等；
分子泵抽速 2200L/S Edwards
PM 干泵 518m3
/Hr Edwards iH600

3.5 温度控制系统：用于对腔体、内衬及进气、排气管路等部件进行加热，包括加热器、温控器、温度传感器等；
3.5.1 反应腔室温控系统：
上腔室温度控制 室温~100℃
中腔室温度控制 室温~100℃
下腔室温度控制 室温~100℃
3.5.2 基座温控系统：
Chiller 控温范围 -20~90℃
基座控温精度 ±0.5℃
基座控温均匀性 ±1℃

3.6 电源系统：用于整个 GSE S200 刻蚀机的电力供应和安全保护；

3.7 传输模块：装有机械手，进行晶片的传输；

3.8 装载模块：装载系统采用高性能的升降机构，并具有能够检测 wafer 的 Mapping 传感器和探测 wafer 位置偏移的报警传感器；配置扫码枪功能；

3.9 软件控制模块：用于整个 GSE C200 刻蚀机的全自动控制，并提供人机界面实现对设备的生产、调试、维护等操作；
3.9.1 系统配置：
操作界面 中文界面、触控液晶显示、鼠标、键盘
3.9.2 软件功能：
权限管理
提供权限管理员、工艺工程师、设备工程师、操作员四种用户权限，并且可以根据用户要求调整权限。
工艺配方管理
用户可以方便的对工艺配方进行创建、删除、修改等操作。 参数管理 用户可以对机台参数进行查看、修改。 自动工艺 用户可以实现自动工艺方式。
手动操作
用户可以对机台进行手动操作，方便用户进行工艺实验。 设备维护 提供了用户对设备部件进行维护检查的功能。
报警管理
用户可以选择报警处理方式，并且可以对历史报警进行查询。
自动记录
系统自动记录工艺过程中的重要参数，并且可以生成 Excel 文件，方便用户查询，增加 wafer ID记录功能。
实时数据
提供给用户重要参数的实时变化，并且以曲线的形式显示，辅助用户分析和监测。 提供了重要部件的生命周期管理，当达到使用寿命时报警提示。

3.10 安全性能：
3.10.1 系统提供完备的报警和安全互锁功能。互锁是为保证人员和设备的安全，对某些有潜在危险的操作所进
行的软硬件限制。对于有互锁限制的操作，只有当互锁条件满足时才能运行。这些潜在危险包括：高频辐射、
高温（烫伤、器件损伤甚至引发火灾等）、危险气体（毒性、腐蚀性、易燃、易爆）、运动部件、危险电压、气压差等。
3.10.2 当互锁被触发时，系统会发出报警，操作屏上会提示报警信息，并有声音提示。在安全级别较高的互锁
条件或自动模式下触发互锁后，工艺会被终止，这时需要操作员排除问题并清除报警，之后重新初始化系统。
互锁功能在手动模式下依然有效。系统自动记录全部报警和错误日志，可以在日志系统中查找历史记录。
3.10.3 工艺异常（工艺状态下的压力、流量、射频功率超出正常范围）后会立即终止工艺，关闭射频电源，关闭全部气路阀门，隔离腔室。
3.10.4 紧急情况发生时，可以通过 EMO 回路紧急停止设备，减少人员设备伤害。EMO 按钮为黄色背景红色蘑菇
头形状，在设备前面板安装，当按下时，EMO 回路就会切断机台供电。在断电情况下，系统主电源会自动关断，除 Slot 阀之外，所有阀门会自动关闭。恢复供电的时候设备不会自动启动。
3.10.5 标识：射频、高温、高压部分都贴有危险标记以提醒注意；可活动和转动的机械部分都贴有危险标记以提醒注意。
3.10.6 报警接口：系统提供连接特气泄漏检测报警装置的接口（系统不提供该检测报警装置）。

3.1 Vacuum Reaction Chamber: This chamber provides a vacuum environment for the process, including valves, linings, electrostatic chucks, vacuum meters, vacuum switches, etc.

Chamber base vacuum: < 0.5 mT
Chamber leak rate: < 1.0 mTorr/min
Process pressure control range: 5~85 mTorr (Inficon)
Pressure control capability: 2mT @ 50sccm Ar (without plasma ignition)
Process pressure control accuracy: 0.1 mTorr
Lower electrode temperature range: -20~90℃
Lower electrode temperature control accuracy: ±0.5℃
Substrate type: Si substrate
Wafer size: 6-inch with large flat edge, 57.5mm
ESC configuration: 6-inch large flat edge ESC kit
ESC adsorption voltage: 10kV

3.2 Plasma System: This system provides and controls the radio frequency (RF) energy generation, generating and maintaining plasma within the process chamber through inductive coupling. Components include the plasma source, automatic matcher, etc.
ICP Generator: 1500W, 13.56MHz
Available power range for the upper electrode: 150~1200W
Bias Generator: 300W, 13.56MHz
Available power range for the lower electrode: 1~260W
Matching stabilization time: < 3 s
RF accuracy: ±1% of set value or ±5W (when set value > 500W)
Reflected power: <3W (5-100W) or 3% of set value (when set value > 100W)

3.3 Gas Delivery System: This system provides process gases, including mass flow controllers (MFCs), pneumatic valves, etc.
Gas Circuit Gas Flow Rate (sccm)
Gas1 Ar 200
Gas2 O2 200
Gas3 He 200
Gas4 N2 200
Gas5 CF4 200
Gas6 SF6 200
Gas7 Cl2 200
Gas8 BCl3 (heated) 200
Gasbox leak rate: < 0.5 mTorr/min

3.4 Exhaust System: Used for the discharge of reaction by-products, including swing valves, molecular pumps, dry pumps, etc.;
Molecular Pump Pumping Speed: 2200L/S Edwards
PM Dry Pump: 518m3/Hr Edwards iH600

3.5 Temperature Control System: Used for heating components such as the chamber, lining, inlet and exhaust pipes, including heaters, temperature controllers, temperature sensors, etc.;
3.5.1 Chamber Temperature Control System:
Upper Chamber Temperature Control: Room Temperature ~ 100℃
Middle Chamber Temperature Control: Room Temperature ~ 100℃
Lower Chamber Temperature Control: Room Temperature ~ 100℃
3.5.2 Base Temperature Control System:
Chiller Temperature Control Range: -20~90℃
Base Temperature Control Accuracy: ±0.5℃
Base Temperature Control Uniformity: ±1℃

3.6 Power Supply System: Used for the power supply and safety protection of the entire GSE S200 etching machine;

3.7 Transmission Module: Equipped with a manipulator for wafer transfer;

3.8 Loading Module: The loading system uses a high-performance lifting mechanism and includes a Mapping sensor capable of detecting wafers and an alarm sensor that detects wafer position offsets; equipped with barcode scanner functionality;

3.9 Software Control Module: Used for fully automatic control of the entire GSE C200 etching machine, providing a human-machine interface for production, debugging, maintenance, and other operations;
3.9.1 System Configuration:
Operating Interface: Chinese Interface, Touchscreen LCD Display, Mouse, Keyboard
3.9.2 Software Functions:
Permission Management:
Provides four user permissions: administrator, process engineer, equipment engineer, and operator, and can adjust permissions based on user requirements.
Process Recipe Management:
Users can easily create, delete, and modify process recipes.
Parameter Management:
Users can view and modify machine parameters.
Automatic Process:
Users can implement automatic process modes.
Manual Operation:
Users can manually operate the machine for process experiments.
Equipment Maintenance:
Provides users with the functionality to perform maintenance checks on equipment components.
Alarm Management:
Users can select alarm handling methods and query historical alarms.
Automatic Record:
The system automatically records important parameters during the process and can generate Excel files for user queries, adding wafer ID recording functionality.
Real-time Data:
Provides users with real-time changes in important parameters displayed in the form of curves to assist users in analysis and monitoring. Provides lifecycle management for important components, and alerts users when the service life is reached.

3.10 Safety Performance:
3.10.1 The system provides complete alarm and safety interlock functions. Interlocks are software and hardware restrictions imposed on certain potentially dangerous operations to ensure the safety of personnel and equipment. Operations with interlock restrictions can only be performed when the interlock conditions are met. These potential hazards include: high-frequency radiation, high temperature (burns, device damage, and even fire hazards), dangerous gases (toxic, corrosive, flammable, explosive), moving parts, dangerous voltages, and pressure differences.
3.10.2 When an interlock is triggered, the system will issue an alarm, display an alarm message on the operation screen, and emit a sound prompt. After an interlock is triggered in a higher safety level or automatic mode, the process will be terminated. At this time, the operator needs to troubleshoot and clear the alarm before reinitializing the system. The interlock function remains effective in manual mode. The system automatically records all alarms and error logs, which can be searched in the log system.
3.10.3 The process will be immediately terminated if any process abnormality (such as pressure, flow rate, or RF power exceeding normal ranges) occurs, with the RF power being turned off, all gas valves being closed, and the chamber being isolated.
3.10.4 In emergency situations, the EMO circuit can be used to emergency stop the equipment, reducing harm to personnel and equipment. The EMO button is shaped like a yellow-backgrounded red mushroom and installed on the front panel of the equipment. When pressed, the EMO circuit will cut off the power supply to the machine. In the case of a power outage, the system's main power supply will automatically shut down, and all valves except the Slot valve will automatically close. The equipment will not automatically start when power is restored.
3.10.5 Labeling: Hazardous labels are affixed to the RF, high-temperature, and high-pressure sections to draw attention; similarly, mechanical parts that can move or rotate also have hazardous labels.
3.10.6 Alarm Interface: The system provides an interface for connecting a special gas leak

主要功能及特色

GSE S200 感应耦合等离子体刻蚀机具有稳定可靠的工艺性能、宽阔的工艺窗口和良好的工艺兼容性，主要用于200mm 晶片（可兼容 50~200mm 直径晶片）的多功能刻蚀。

GSE S200 感应耦合等离子体刻蚀机是感应耦合高密度等离子体干法刻蚀机(Inductively Coupled Plasma Etcher)，采用半导体刻蚀机的成熟技术，独特设计的等离子体源，实现了对腔室内等离体密度均匀控制，满足刻蚀工艺的要求。

GSE S200 感应耦合等离子体刻蚀机采用模块化设计，整机包括工艺模块（PM: Process Module）和传输模块（TM: Transfer Module）。晶片在工艺模块内进行刻蚀，工艺时，在晶片上方产生等离子体，对晶片进行刻蚀。传输模块装
有机械手，实现晶片在其和工艺模块之间的传输。

GSE S200 感应耦合等离子体刻蚀机具备智能化的软件操作系统，实现单片晶圆的自动刻蚀工艺。

The GSE S200 inductively coupled plasma etching machine features stable and reliable process performance, a wide process window, and excellent process compatibility. It is primarily used for multi-functional etching of 200mm wafers (compatible with wafers of diameters ranging from 50 to 200mm).

The GSE S200 inductively coupled plasma etching machine is an inductively coupled high-density plasma dry etching machine that utilizes mature technology from semiconductor etching machines. Its uniquely designed plasma source enables uniform control of plasma density within the chamber, meeting the requirements of the etching process.

The GSE S200 inductively coupled plasma etching machine adopts a modular design, with the entire machine consisting of a process module (PM) and a transfer module (TM). The wafer undergoes etching within the process module. During the etching process, plasma is generated above the wafer to etch it. The transfer module is equipped with a manipulator that facilitates the transfer of wafers between it and the process module.

The GSE S200 inductively coupled plasma etching machine is equipped with an intelligent software operating system that enables automatic etching of individual wafers.

主要附件及配置

无