仪器分类
High vacuum magnetron sputtering coating equipment_高真空磁控溅射镀膜设备(DC-2 RF-1)
High vacuum magnetron sputtering coating equipment_高真空磁控溅射镀膜设备(DC-2 RF-1)
仪器编号
2024030400006
SN序列号
生产厂家
沈阳科诚真空技术有限公司
型号
CK-400
制造国家
中国
分类号
放置地点
Public Building P016
购置日期
2024-03-04
入网日期
2024-03-14

主要规格及技术指标

1、溅射真空室腔体:1套
1) 外形:优质304不锈钢D形前开门真空室腔体1套,内部尺寸长D400* 高450mm,门采用铰链式方门,门配DN100视窗1套;
2) 底部:3英寸永磁靶接口3套, CF25照明接口2套,JTFB-1200风冷分子泵接口1套;
3) 顶部:样品台接口1套,气动挡板接口1套;
4) 侧壁:JCDQ-J40B-CF超高真空气动挡板阀预留接口1套,GDQ-J16B-KF高真空气动挡板阀预留接口1套,预留法兰若干;
5) 腔体漏率:整体漏率优于5×10-10Pa.m3/S,保压12小时,压强小于10Pa。
2、磁控溅射系统:1套
1) 磁控靶:3英寸永磁靶2套,强磁靶1套,靶材3英寸,靶头可摆动调节溅射角度,靶头内部水冷;
2) 靶挡板:各溅射靶配独立挡板,以保证镀膜的工艺性(预溅射、单层膜、多层膜、掺杂膜等镀膜防止交叉污染和干扰等)
3) 直流电源2台:500W;
4) 射频电源1台:500W,自动匹配。
3、溅射样品台系统:1套
1) 基片旋转:采用超高真空磁流体密封,保证密封可靠性,转速5~20转/分,通过触摸屏控制连续可调;
2) 基片工位:安装4英寸基片1片;
3) 基片加热:基片台加热温度500℃,采用电阻铠装加热器及绝缘、屏蔽等,具有真空条件下加热快、抗氧化、寿命长等优点,采用日本岛电PID 可编程智能温度控制仪,可以设定分段升温速率、保持温度、保持时间,并通过热电偶的反馈信号及加热,电源调功调压控制,实现加热温度自动控制;
4) 基片升降:电动升降,衬底与靶材间距80-140mm,通过触摸屏连续可调;
5) 基片挡板:采用磁流体配气缸形式,平稳开合。
4、真空泵机组:1套
1) VRD-30双级泵1台;
2) DDC-JQ40-KF真空电磁充气阀1台;
3) KF40泵阀连接软管1套;
4) GDQ-J40B-KF高真空气动挡板阀1台;
5) JTFB-1200风冷分子泵1台;
6) CCQ-200CF电动超高真空插板阀1台;
7) CDQ-J40B-CF超高真空气动挡板阀1台;
8) GDQ-J16B-KF高真空气动挡板阀1台;
9) ZDF-5227数显真空计1台(测量范围:1×105~1×10-5Pa)。
5、膜厚监测系统:1套
1) 膜厚仪:采用SQC310石英晶振膜厚监控仪1台,探头:2通道;显示以及控制精度:0.01Å/秒,频率分辨率0.01Hz;
2) 膜厚探头:水冷膜厚探头1套,6MHz,采用快速卡扣式结构更换晶振片,避免用螺纹压紧式结构损坏晶振片,采用胶圈锁紧密封结构。
6、配气系统:1套(3路工艺气体流量控制,如Ar,N2等)
1) D07-26C,500SCCM质量流量控制器2套,200SCCM质量流量控制器1套;
2) GDQ-J16B-KF高真空气动挡板阀1台;
3) φ6电磁截止阀3套;
4) φ6不锈钢管路1套。
7、电控系统:1套(电气控制采用设备机架和电控柜内置)
1) 烘烤照明电源:1台;
2) 总控制电源(配10英寸触摸屏,PLC控制器,控制样品台,磁控靶挡板,泵阀开关、相序检测,以及电缆开关接头等):1台;
8、其他技术参数:
1) 缺相保护、误操作保护,联动互锁以及一键真空启停等功能;
2) 供电:~220V单相供电系统(峰值5KW);
3) 供水:小型冷水机,冷却水温度5℃~35℃,工作环境温度:10℃~25℃;
4) 供气:小型无油静音气泵,提供0.2-0.3MPa气压,驱动气动阀门;
5) 真空室极限真空:优于6×10-5Pa,大气至6×10-4Pa时间优于35分钟(充干燥氮气);

1.Sputtering Vacuum Chamber: 1 set
(1) Appearance: 1 set of high-quality 304 stainless steel D-shaped front-opening vacuum chamber with internal dimensions of D400*450mm in length and height. The door is of hinged square type and equipped with 1 set of DN100 viewport.
(2) Bottom: 3 sets of 3-inch permanent magnet target interfaces, 2 sets of CF25 lighting interfaces, and 1 set of JTFB-1200 air-cooled molecular pump interface.
(3) Top: 1 set of sample stage interface and 1 set of pneumatic baffle interface.
(4) Sidewall: 1 set of reserved interface for JCDQ-J40B-CF ultra-high vacuum pneumatic baffle valve, 1 set of reserved interface for GDQ-J16B-KF high vacuum pneumatic baffle valve, and several reserved flanges.
(5) Chamber Leak Rate: The overall leak rate is better than 5×10-10Pa.m3/S, with a pressure holding time of 12 hours and a pressure less than 10Pa.

2.Magnetron Sputtering System: 1 set
(1) Magnetron Targets: 2 sets of 3-inch permanent magnet targets and 1 set of strong magnet target. The target material is 3 inches in diameter. The target head can swing to adjust the sputtering angle and is internally water-cooled.
(2) Target Shields: Each sputtering target is equipped with an independent shield to ensure the processability of coating (pre-sputtering, single-layer film, multi-layer film, doped film, etc.) to prevent cross-contamination and interference.
(3) 2 DC Power Supplies: 500W each.
(4) 1 RF Power Supply: 500W, with automatic matching.

3.Sputtering Sample Stage System: 1 set
(1) Substrate Rotation: Ultra-high vacuum magnetic fluid sealing is adopted to ensure sealing reliability. The rotation speed is 5 to 20 rpm, continuously adjustable through a touch screen.
(2) Substrate Position: Accommodates 1 piece of 4-inch substrate.
(3) Substrate Heating: The substrate stage heating temperature is 500℃. It adopts resistance sheathed heaters, insulation, and shielding, etc., with advantages such as fast heating under vacuum conditions, anti-oxidation, and long lifespan. It uses a programmable intelligent temperature controller from Shimaden in Japan, which can set segmented heating rates, holding temperatures, holding times, and achieve automatic temperature control through thermocouple feedback signals and heating power modulation and voltage control.
(4) Substrate Lifting: Electric lifting, with a substrate-to-target spacing of 80-140mm, continuously adjustable through a touch screen.
(5) Substrate Shield: Uses a magnetic fluid-cylinder configuration for smooth opening and closing.

4.Vacuum Pump Unit: 1 set
(1) 1 VRD-30 Double-Stage Pump.
(2) 1 DDC-JQ40-KF Vacuum Electromagnetic Gas-Filled Valve.
(3) 1 Set of KF40 Pump-Valve Connection Hose.
(4) 1 GDQ-J40B-KF High Vacuum Pneumatic Baffle Valve.
(5) 1 JTFB-1200 Air-Cooled Molecular Pump.
(6) 1 CCQ-200CF Electric Ultra-High Vacuum Gate Valve.
(7) 1 CDQ-J40B-CF Ultra-High Vacuum Pneumatic Baffle Valve.
(8) 1 GDQ-J16B-KF High Vacuum Pneumatic Baffle Valve.
(9) 1 ZDF-5227 Digital Vacuum Gauge (measurement range: 1×105~1×10-5Pa).

5.Film Thickness Monitoring System: 1 set
(1)Film Thickness Gauge: 1 SQC310 quartz crystal oscillator film thickness monitor is adopted, with a probe of 2 channels. Display and control accuracy: 0.01Å/second, frequency resolution: 0.01Hz.
Film Thickness Probe: 1 set of water-cooled film thickness probe, 6MHz, with a quick snap-on structure for replacing the crystal oscillator to avoid damage caused by threaded compression structures. A rubber seal is adopted for a tight seal.

6.Gas Distribution System: 1 set (3-way process gas flow control, such as Ar, N2, etc.)
2 sets of D07-26C, 500SCCM mass flow controllers and 1 set of 200SCCM mass flow controller.
1 set of GDQ-J16B-KF high vacuum pneumatic baffle valve.
3 sets of φ6 electromagnetic shut-off valves.
1 set of φ6 stainless steel piping.

7.Electrical Control System: 1 set (Electrical control is built into the equipment rack and electrical control cabinet)
1 set of baking and illumination power supply.
1 set of main control power supply (equipped with a 10-inch touch screen, PLC controller, controlling the sample stage, magnetic control target baffle, pump valve switches, phase sequence detection, as well as cable switch connectors, etc.).

8.Other Technical Parameters:
Functions include phase loss protection, misoperation protection, linkage interlocking, and one-button vacuum start/stop.
Power Supply: ~220V single-phase power supply system (peak power of 5KW).
Water Supply: Small water chiller with cooling water temperature ranging from 5℃~35℃ and operating ambient temperature between 10℃~25℃.
Gas Supply: Small oil-free silent air pump providing 0.2-0.3MPa air pressure to drive pneumatic valves.
Ultimate vacuum of the vacuum chamber: Better than 6×10-5Pa, with a time from atmospheric pressure to 6×10-4Pa of less than 35 minutes (after filling with dry nitrogen).

主要功能及特色

用于纳米级单程及多层功能膜、硬质膜、金属膜、半导体膜、介质膜等新型薄膜材料的制备。整套设备操作简便,综合功能多,扩展空间大,适合及满足院校的教学与科研。
本设备由于采用了超高真空密封技术,极限真空高,恢复工作真空时间短;整机主要采用金属密封技术及超高真空阀门,真空管路用不锈钢金属波纹管路,避免了传统结构带来的安装维护困难的问题。

This equipment is used for the preparation of novel thin film materials such as nanoscale single-layer and multi-layer functional films, hard films, metal films, semiconductor films, and dielectric films. The entire set of equipment is easy to operate, boasts numerous comprehensive functions, and has ample room for expansion, making it suitable and satisfactory for teaching and research in institutions of higher education.

Due to the adoption of ultra-high vacuum sealing technology, this equipment exhibits a high ultimate vacuum and a short time for restoring the working vacuum. The entire machine mainly utilizes metal sealing technology and ultra-high vacuum valves, with vacuum piping composed of stainless steel metal bellows, which avoids installation and maintenance difficulties caused by traditional structures.

主要附件及配置

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