主要规格及技术指标

2.1极限压力： 6.0×10-5Pa
2.2恢复真空抽气时间：从1×105Pa至6×10-4Pa不超过30min.
2.3抽气速率： 2000L/s
2.4电子枪 8KW
2.5基片旋转：0-40转/分钟，可控可调
2.6基片台尺寸 平板300mm(可装载工件3组4英寸硅片)
2.7控制方式 PLC半自动控制系统，
2.8报警及保护 对泵，靶，电极等缺水，过流过压，断路等异常情况进行报警并执行相应保护措施

2.1 Ultimate Pressure: 6.0×10-5Pa
2.2 Vacuum Recovery Pumping Time: It takes no more than 30 minutes to pump from 1×105Pa to 6×10-4Pa.
2.3 Pumping Rate: 2000L/s
2.4 Electron Gun: 8KW
2.5 Substrate Rotation: 0-40 rpm, controllable and adjustable
2.6 Substrate Stage Size: Flat plate 300mm (capable of loading 3 sets of 4-inch silicon wafers)
2.7 Control Method: PLC semi-automatic control system
2.8 Alarm and Protection: It alarms and executes corresponding protective measures for abnormalities such as water shortage, overcurrent, overvoltage, and open circuit in pumps, targets, electrodes, etc.

主要功能及特色

TEMD-500镀膜机为单室立式圆柱形结构的高真空电子束蒸发系统，可用于开发纳米级单层及多层功能膜、各种光学膜、功能膜等。具有真空度高、抽速快、基片装卸方便的特点，除了常规低熔点金属的蒸镀以外，还可以蒸镀难熔金属和非金属材料，如SiO2，AL2O3，Al、Au、Ag、Ni、Ti、Cr、Pt等可应用于制备光学薄膜、导电薄膜，半导体薄膜、铁电薄膜等，可广泛应用于生产、研究等高科技领域。
蒸发镀膜的基本原理：用蒸发器皿加热蒸发物质使之汽化，蒸发粒子流直接射向基片并在基片上沉积形成固态薄膜的技术。

The TEMD-500 coating machine is a high-vacuum electron beam evaporation system with a single-chamber vertical cylindrical structure. It can be used for developing nanoscale single-layer and multi-layer functional films, various optical films, functional films, and so on. Characterized by its high vacuum level, fast pumping speed, and convenient loading and unloading of substrates, it can not only evaporate conventional low-melting-point metals but also refractory metals and non-metallic materials such as SiO2, AL2O3, Al, Au, Ag, Ni, Ti, Cr, Pt, etc. This machine can be applied in the preparation of optical films, conductive films, semiconductor films, ferroelectric films, and so on, and it can be widely used in high-tech fields such as production and research.

The basic principle of evaporation coating is a technique that involves heating and evaporating substances in an evaporator to vaporize them, and then directing the evaporated particle streams directly onto the substrate to deposit and form a solid-state thin film.

主要附件及配置

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