主要规格及技术指标

工艺系统：提供工艺反应的环境，包括反应腔、上电极、气体分配装置、热台、基板温控装置等；
腔室极限真空：<10mTorr
腔室漏气率： ≤1mTorr/min
控压范围： 200~8000mTorr
控压精度： 设定值0.2%
Heater温度范围： 100~400℃
Heater均匀性： ≦±1%设定值

Process System: Provides the environment for process reactions, including the reaction chamber, upper electrode, gas distribution system, heating stage, substrate temperature control device, etc.
Chamber Ultimate Vacuum: <10 mTorr
Chamber Leak Rate: ≤1 mTorr/min
Pressure Control Range: 200–8000 mTorr
Pressure Control Accuracy: ±0.2% of setpoint
Heater Temperature Range: 100–400°C
Heater Uniformity: ≤±1% of setpoint

主要功能及特色

等离子体增强化学气相沉积设备具有工艺性能优良和产能大的特点，主要用于半导体制造工艺中沉积氧化硅（ SiO2））, 氮化硅（ SiNx），非晶硅（α α-Si）等膜层材料，可使用 8英寸向下兼容的基片。

Shale® A采用精心设计的等离子射频系统，实现了对腔室内等离子体密度的均匀控制；具备高效的反应气体匀流装置和高流导的抽气系统，能获得高均匀的气体分布、压力和流速；这些特点使 Shale® A获得了出色的沉积均匀性和质量，能满足多种沉积工艺的要求。Shale® A特别注重人机功效，操作安全方便，同时还具备良好的维护性和扩展性。

The plasma-enhanced chemical vapor deposition (PECVD) equipment boasts excellent process performance and high production capacity. It is primarily used in semiconductor manufacturing processes to deposit thin-film materials such as silicon dioxide (SiO₂), silicon nitride (SiNₓ), and amorphous silicon (α-Si), and is compatible with substrates up to 8 inches in size.

Shale® A features a meticulously designed RF plasma system that achieves uniform control of plasma density within the chamber. Equipped with an efficient reaction gas flow homogenizer and a high-conductance pumping system, it ensures highly uniform gas distribution, pressure, and flow velocity. These characteristics enable Shale® A to deliver outstanding deposition uniformity and quality, meeting the requirements of various deposition processes. Shale® A places special emphasis on ergonomics, offering safe and user-friendly operation while maintaining excellent maintainability and scalability.

主要附件及配置

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