主要规格及技术指标

I. Mask & Substrate Compatibility
1. Substrate size: up to 6-inch (150 mm) wafer; also supports 4-inch, 2-inch and down to 5 × 5mm chips; maximum substrate footprint 150 × 150mm.
2. Substrate thickness: ≤ 10 mm.
3. Mask size: standard 2 × 2inch; maximum 7 × 7inch (SEMI) or 9 × 9inch (SEMI).
II. Exposure Modes
1. Types: soft contact, hard contact, vacuum contact, and proximity exposure.
2. Proximity parameters: gap 1–300µm, setting resolution 1µm; vacuum-contact pressure adjustable down to –80 kPa.
3. Operation modes: constant power or constant dose; optional flood exposure and split exposure.
III. Optical Performance
1. Wavelengths: g-line (436 nm), h-line (405 nm), i-line (365 nm); broadband UV 350–450 nm.
2. Sources: 350 W Hg, 500 W Hg-Xe, or UV-LED house; intensities 64.36 mW cm⁻² @ 365nm, 153.3mW cm⁻² @ 405nm.
3. Intensity uniformity: better than ±2.5%.
IV. Lithographic Accuracy
1. Resolution (1µm resist, i-line):
1.1. Vacuum contact ≤ 0.8µm;
1.2. Hard contact ≤ 1.5µm;
1.3. Soft contact ≤ 2.5µm;
1.4. Proximity ≤ 3.0µm.
2. Overlay accuracy: front-side ±0.5µm, back-side ±1.0µm; supports front, back and IR alignment.
V. Additional Features
1. Substrate materials: Si, glass, etc.
2. Resist compatibility: all mainstream resists, adjustable exposure time.
3. Applications: R&D and low-volume production lithography.

一、掩模与基板适配参数
1、基板尺寸：最大支持6英寸（150mm）晶圆，向下兼容4英寸、2英寸等规格；支持最小5×5mm小尺寸样品，最大基板尺寸150×150mm；
2、晶圆厚度：最大10mm；
3、掩模尺寸：标准2×2英寸，最大可适配7英寸×7英寸（SEMI）或9英寸×9英寸（SEMI）规格。
二、曝光模式参数
1、曝光类型：软接触、硬接触、真空接触三种接触式曝光，及接近式曝光；
2、接近式曝光参数：曝光间隙范围1-300μm，间隙设置精度1μm；真空接触压力可调节至-80kPa；
3、运行模式：恒定功率、恒定剂量；可选洪水曝光、分割曝光功能。
三、曝光光学性能参数
1、波长范围：覆盖g线（436nm）、h线（405nm）、i线（365nm），支持350-450nm紫外宽光谱；
2、曝光光源：可选350W汞灯、500W汞氙灯或UV LED灯房；365nm波长光强64.36mW/cm²，405nm波长光强153.3mW/cm²；
3、光强均匀性：优于±2.5%。
四、光刻精度参数
1、分辨率（光刻胶厚度1μm，i线模式）：真空接触模式优于0.8μm；硬接触模式1.5μm；软接触模式2.5μm；接近式模式3.0μm；
2、对准精度与模式：正面对准精度±0.5μm，背面对准精度±1.0μm；支持正面、背面及红外对准。
五、其他特性
1、基底兼容性：适配硅、玻璃等多种基底材料；
2、光刻胶兼容性：兼容主流光刻胶类型，曝光时间可灵活调节；
3、应用场景：满足科研实验与小批量生产的多样化光刻需求。

主要功能及特色

1. High-precision, multi-mode lithography and alignment
1.1 Soft, hard, vacuum contact and proximity exposure; vacuum-contact resolution down to 0.6 µm; proximity gap adjustable 1-300 µm with 1 µm setting accuracy, covering every precision level.
1.2 Front-side, back-side and IR alignment on a motorized stage with pattern-recognition software; front-side overlay accuracy ≤ ±0.25 µm, back-side ≤ ±1.0 µm, ideal for RDL, micro-bump and other critical layers.
2. Broad process compatibility
2.1 Handles 2-6 in wafers, fragments down to 5 × 5 mm and substrates up to 150 × 150 mm; works with Si, glass, sapphire, etc.
2.2 Processes thick resists (≤ 500 µm) and high-aspect-ratio structures (≥ 10:1); performs bond alignment, fusion bonding, SMILE imprint and other special processes for MEMS, compound semiconductors and advanced packaging R&D and pilot production.
2.3 Developed recipes can be transferred directly to automated mask aligners for high-volume manufacturing, bridging research and production.
3. Superior optics and flexible illumination
3.1 Proprietary MO Exposure Optics anti-diffraction system uses microlens arrays to deliver telecentric illumination with ≤ ±2.5 % intensity uniformity; exposure light is decoupled from the lamp, so small lamp shifts do not affect uniformity.
3.2 Lamp options: 350 W Hg, 500 W Hg-Xe or UV-LED house, 350-450 nm broadband; LED lowers running and waste-disposal costs. Output intensity adjustable 15-100 %, constant-power or constant-dose modes for every resist and process.
4. Efficient, user-friendly operation and automation
4.1 Ergonomic design with high-end digital microscope and camera system; large-field, high-quality images on the display simplify alignment.
4.2 Recipe editor, data logging and multi-level user rights reduce mistakes and workload.
4.3 Highly automated alignment and exposure-time control minimize operator intervention and guarantee repeatability; optional remote access speeds fault diagnosis.
5. High cost-performance and safety
5.1 Small footprint; all operating elements and consumables are easily accessible; LED source cuts maintenance costs.
5.2 UV shielding, safety interlocks and anti-pinch devices meet stringent safety requirements.
5.3 Optional built-in Class 100 mini-environment gives ±0.1 °C temperature and ±2 % RH control, minimizing particle contamination and thermal distortion.

1、高精度多模式光刻与对准功能：
1.1、该设备能实现软接触、硬接触、真空接触及接近式四种曝光模式，真空接触模式下分辨率可达到0.6μm，接近式曝光的间隙可在1 - 300μm间精准调节，间隙设置精度达1μm，能满足不同精度需求的图形转移任务。
1.2、对准方面支持正面、背面及红外对准三种模式，搭配电动对准平台与模式识别软件，正面对准精度最高可达±0.25μm，背面对准精度为±1.0μm，可适配再布线层、微凸点等不同场景的对准需求，避免因对准偏差影响光刻质量。
2、多元工艺兼容功能：
2.1、它可兼容2-6英寸晶圆以及最小5×5mm的小尺寸样品，最大基板尺寸达150×150mm，还能适配硅、玻璃、蓝宝石等多种基底材料。
2.2、同时支持厚胶工艺（胶厚≤500μm）和高深宽比结构（深宽比≥10:1）的加工，并且能完成键合对准、熔接键合及SMILE压印等特殊工艺，适配MEMS、化合物半导体、先进封装等多个领域的研发与小批量生产需求。
2.3、此外其开发的工艺可快速转化为自动化掩膜对准机的大批量生产工艺，衔接科研与量产环节。
3、优质光学与灵活光源配置：
3.1、搭载专属的MO Exposure Optics抗衍射曝光系统，基于微型透镜板设计，能实现远心照明，让整个曝光区域光强均匀性优于±2.5%，还可将曝光光与灯源解耦，即便灯出现微小错位也不会影响照明均匀性。
3.2、光源可选350W汞灯、500W汞氙灯或UV LED灯房，覆盖350 - 450nm紫外宽光谱，LED光源不仅能降低运营维护成本，还能减少汞灯带来的特殊垃圾处理问题，各波长输出光强可在15%-100%间调节，还支持恒定功率、恒定剂量两种运行模式，适配不同光刻胶与工艺要求。
4、便捷高效的操作与自动化功能：
4.1、设备采用人体工程学设计，配备高端数码显微镜和摄像系统，显示屏上能呈现高质量、大视野图像，让校准工作更便捷。
4.2、同时具备配方编辑、数据记录功能，还可分配使用权限，减少操作失误与工作负担。
4.3、其高度自动化的设计，搭配自动对准、自动控制曝光时间等功能，既能最大程度减少操作员干预，又能保证工艺结果的可重复性，部分配置下还支持远程访问设备，便于快速识别和解决故障。
5、高性价比与可靠安全保障：
5.1、设备占地面积小，各类操作元件和可更换部件易于接触，搭配LED光源后大幅降低了维护成本。
5.2、安全防护方面，设有紫外照射防护、安全锁、防夹装置等设施，能满足严格的安全要求。
5.3、若选配内置Class 100洁净腔室，还可实现温度±0.1°C、湿度±2%的精准环境控制，减少颗粒污染与热变形对光刻工艺的影响。

主要附件及配置

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