主要规格及技术指标

MASK AND WAFER / SUBSTRATE
Wafer Size 1" to 150 or 200 mm
Max. Substrate Size 150 x 150 mm
Min. Pieces 5 x 5 mm
Wafer Thickness max. 10 mm
Mask Size standard 2" x 2"
up to 7" x 7" (SEMI) or
up to 9" x 9" (SEMI)
EXPOSURE MODES
Contact soft, hard, vacuum
Proximity exposure gap 1–300 μm
Gap Setting Accuracy 1 μm
Vacuum Contact adjustable to - 80 kPa
Modes constant power, constant dose
Options flood exposure, split exposure
EXPOSURE OPTICS
Resolution see page 8
Wavelength Range UV400 350–450 nm
UV300 280–350 nm
UV250 240–260 nm
Exposure Source Hg lamp 350 W
HgXe lamp 500 W
UV LED lamp house
Intensity Uniformity < 2.5 % (200 mm)

掩模和晶片/基板
晶圆尺寸1英寸至150或200毫米
最大基板尺寸150 x 150 mm
最小件数5 x 5 mm
晶圆厚度最大10mm
Mask尺寸标准2“x 2”
高达7英寸x 7英寸（SEMI）或高达9英寸x 9英寸（SEMI）
曝光模式
接触软、硬、真空
近距离曝光间隙1-300μm
间隙设置精度1μm
真空触点可调节至-80 kPa
模式恒定功率、恒定剂量
选项洪水暴露、分割暴露
曝光光学
波长范围UV400 350-450纳米
紫外线300 280-350纳米
紫外线250 240-260纳米
曝光源汞灯350W
汞灯500W
UV LED灯房
强度均匀度<2.5%（200毫米）

主要功能及特色

MEMS
The highly uniform, light-shaping exposure optics of the MA/BA Gen4 series is
ideal for processing thick-resist MEMS applications. Features like bottom-side
or infrared alignment (transmission or reflective illumination), bond alignment and
the capability to process any type of substrate make the platform an enabling
lithography tool for development and low-volume production of MEMS devices.
ACADEMIA
The MA/BA Gen4 series is versatile and easy to use, which makes it the tool of
choice for research applications. Whether deployed for nanoimprint lithography,
bond alignment or thick-resist lithography applications, changeover to different
processes is quickly executed, guaranteeing high flexibility. Optional add-ons
such as auto and direct alignment offer special guidance and assistance for
inexperienced operators.
3D STRUCTURING
The MA/BA Gen4 series can optionally be equipped with SMILE (SUSS MicroTec’s
Imprint Lithography Equipment), an imprint lithography technology that allows
very precise

主要附件及配置

无