主要规格及技术指标

1.真空系统：分子泵：≥1300 L/s；干泵：≥100 m3/h；APC
2.反应腔：6061阳极硬质氧化铝；选配 OES 终点检测（200 ~ 800 nm 全光谱）
3.卡盘冷水机：8英寸机械卡盘（选配静电吸盘）；背氦冷却；冷水机：-10℃ ~ 80℃
4.射频电源： 13.56 MHz 1.2 kW 上电极、1 kW 下电极射频发生器，匹配器； 射频线圈拥有自主专利
5.Gas box: 流量计及气动阀;流量计：多达14路工艺气体

1.Vacuum system: molecular pump: ≥1300 L/s; Dry pump: ≥100 m3/h; APC
2. Reaction chamber: 6061 anode hard alumina; Optional OES endpoint detection (200 ~ 800 nm full spectrum)
3.Chuck chiller: 8-inch mechanical chuck (optional electrostatic suction cup); Helium cooling; Chiller: -10°C ~ 80°C
4.RF Power Supply: 13.56 MHz 1.2 kW Upper Electrode, 1 kW Lower Electrode RF Generator, Matcher; The RF coil has its own patent
5.Gas box: flow meter and pneumatic valve; Flow meter: up to 14 process gases

主要功能及特色

鲁汶仪器生产的Pishow®系列ICP刻蚀系统具有高速、高选择比、高均匀性、低损伤、低粗糙度等优点。目前已经为客户Fab端提供了适用于大规模HEMTs，MEMS，光波导等领域图形化的完整解决方案：
1. 拥有多种材料刻蚀解决方案，包括硅基材料、金属、III-V族化合、碳化硅、铌酸锂、磷化铟等化合物半导体材料
2.可提供高低温（常规模式-10℃至150℃，高温模式250℃）工艺模式
3.高精度低损伤原子层刻蚀方案
4. 提供适用于8英寸及以下晶圆的单腔和多腔解决方案

Leuven Instruments produces Pishow® series ICP etching systems with high speed, high selectivity ratio, high uniformity, low damage and low roughness. Currently, it has provided customers Fab end with complete solutions suitable for large-scale HEMTs, MEMS, optical waveguide and other fields of patterning:
1.We have a wide range of material etching solutions, including silicon-based materials, metals, group III-V compounds, silicon carbide, lithium niobate, indium phosphide and other compound semiconductor materials.
2.High and low temperature (-10°C to 150°C in conventional mode and 250°C in high temperature mode) process modes are available.
3.High-precision, low-damage atomic layer etching solutions
4. Single and multi-cavity solutions for 8-inch wafers and below

主要附件及配置

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