主要规格及技术指标

1.Vacuum chamber size: Φ500mm*H420mm.
2、Overall dimensions: L2100mm*W1100mm*H1950mm.
3、Overall weight:700KG.
4、Sputtering direction: Target on top, sample on bottom.
5、Magnetron target size and quantity:3 pieces of φ3 inch magnetron targets
6、Sample size and quantity:1 piece of φ8 inch.
1.真空室尺寸：Φ500mm×H420mm
2.整机尺寸：L2100mm×W1100mm×H1950mm
3.整机重量：700Kg
4.溅射方向：靶在上，样品在下
5.磁控靶大小及数量：φ3英寸磁控靶3只
6.样片大小及数量：φ8英寸1片

Power configuration:
1、3 sets of 600W RF power supplies.
2、1 set of Φ6cm Kaufman ion source power supply.
3、Exhaust port size: φ150mm.
4、Process gases: Ar, O2, N2 (three lines).
5、Ultimate vacuum: ≤6.7×10^-5 Pa.
6、System leak rate: ≤5×10^-7 Pa·L/s.
7、Static pressure rise: After the system is turned off for 12 hours, vacuum ≤5 Pa.
电源配置：
1.600W射频电源3台.
2.Φ6cm考夫曼离子源电源1套.
3.抽口大小：φ150mm.
4.工艺气体：Ar、O2、N2三路.
5.极限真空度：≤6.7×10^-5 Pa.
6.系统漏率：≤5×10-7Pa·L/s.
7.静态升压：系统停泵关机12小时后，真空度≤5Pa.

主要功能及特色

磁控靶配备射频电源，用于金属、氧化物、半导体、陶瓷、绝缘体的射频溅射。设备配备Ar、O2、N2三路工艺气体，可进行氧化物、氮化物的反应溅射。每个靶配有独立挡板，用于进行预溅射，同时防止靶交叉污染。
溅射模式：
斜靶多靶轮流溅射模式
斜靶多靶共溅射模式
氧化物、氮化物的反应溅射
系统采用计算机控制，液晶显示屏、鼠标键盘操作，Windows会话界面，操作简单方便，并支持自动控制和手动控制两种方式，可实现真空系统及工艺过程全自动化操作。
Magnetron targets are equipped with RF power supplies for RF sputtering of metals, oxides, semiconductors, ceramics, and insulators. The equipment is equipped with three process gases: Ar, O2, and N2, which can be used for reactive sputtering of oxides and nitrides. Each target is equipped with an independent baffle for pre sputtering while preventing cross contamination of the target.
Sputtering mode:
Slant target multi target alternate sputtering mode
Oblique target multi target co sputtering mode
Reactive sputtering of oxides and nitrides
The system adopts computer control, LCD screen, mouse and keyboard operation, Windows session interface, simple and convenient operation, and supports both automatic and manual control methods, which can achieve fully automated operation of the vacuum system

主要附件及配置

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