主要规格及技术指标

真空室尺寸：Φ500mm×H420mm
整机尺寸：L2100mm×W1100mm×H1950mm
整机重量：700Kg
溅射方向：靶在上，样品在下
磁控靶大小及数量：φ3英寸磁控靶3只
样片大小及数量：φ8英寸1片
电源配置：
600W射频电源3台
Φ6cm考夫曼离子源电源1套
抽口大小：φ150mm
工艺气体：Ar、O2、N2三路
极限真空度：≤6.7×10-5Pa
系统漏率：≤5×10-7Pa·L/s
静态升压：系统停泵关机12小时后，真空度≤5Pa
Vacuum chamber size: Φ 500mm × H420mm
Overall dimensions: L2100mm × W1100mm × H1950mm
Whole machine weight: 700Kg
Sputtering direction: Target on top, sample on bottom
Size and quantity of magnetic control targets: 3 magnetic control targets with a diameter of 3 inches
Sample size and quantity: 1 piece with a diameter of 8 inches
Power configuration:
Three 600W RF power supplies
One set of Kaufman ion source power supply with a diameter of 6cm
 Mouth size: φ 150mm
Process gases: Ar, O2, N2 three channels
Ultimate vacuum degree: ≤ 6.7 × 10-5Pa
System leakage rate: ≤ 5 × 10-7Pa · L/s
Static pressure rise: After the system stops pumping and shuts down for 12 hours, the vacuum degree is ≤ 5Pa

主要功能及特色

磁控靶配备射频电源，用于金属、氧化物、半导体、陶瓷、绝缘体的射频溅射。设备配备Ar、O2、N2三路工艺气体，可进行氧化物、氮化物的反应溅射。每个靶配有独立挡板，用于进行预溅射，同时防止靶交叉污染。
溅射模式：
斜靶多靶轮流溅射模式
斜靶多靶共溅射模式
氧化物、氮化物的反应溅射
系统采用计算机控制，液晶显示屏、鼠标键盘操作，Windows会话界面，操作简单方便，并支持自动控制和手动控制两种方式，可实现真空系统及工艺过程全自动化操作。
Magnetron targets are equipped with RF power supplies for RF sputtering of metals, oxides, semiconductors, ceramics, and insulators. The equipment is equipped with three process gases: Ar, O2, and N2, which can be used for reactive sputtering of oxides and nitrides. Each target is equipped with an independent baffle for pre sputtering while preventing cross contamination of the target.
Sputtering mode:
Slant target multi target alternate sputtering mode
Oblique target multi target co sputtering mode
Reactive sputtering of oxides and nitrides
The system adopts computer control, LCD screen, mouse and keyboard operation, Windows session interface, simple and convenient operation, and supports both automatic and manual control methods, which can achieve fully automated operation of the vacuum system

主要附件及配置

无