主要规格及技术指标

Key Technical Specifications
1. Vacuum chamber: Ø500 mm × H420 mm.
2. Overall system: L 2100 mm × W 1100 mm × H 1950 mm.
3. Net weight: 700 kg.
4. Sputter geometry: targets above, substrate below.
5. Magnetron targets: three 3-inch cathodes.
6. Substrate capacity: one 8-inch wafer.
7. Power delivery:
7.1. 600 W RF per channel;
7.2. Three independent 600 W RF generators;
7.3. One 6-cm Ø Kaufman ion-source supply.
8. Pump port: Ø150 mm.
9. Process gases: Ar, O₂, N₂ (3 lines).
10. Ultimate vacuum: ≤ 6.7 × 10⁻⁵ Pa.
11. System leak rate: ≤ 5 × 10⁻⁷ Pa·L s⁻¹.
12. Static leak-up: ≤ 5 Pa after 12 h with pumps off.
13. Pump-down performance:
13.1. ≤ 25 min to 9 × 10⁻⁴ Pa after brief N₂ vent and atmospheric exposure;
13.2. ≤ 35 min to 6.7 × 10⁻⁴ Pa after brief N₂ vent and atmospheric exposure.
14. Process capability:
14.1. Thickness non-uniformity ≤ ±5 % over defined zone;
14.2. Target-to-substrate distance: 8–12 cm, variable;
14.3. Target-angle adjustment resolution: 1°;
14.4. Maximum substrate temperature: 600 °C;
14.5. Temperature control accuracy: ±1 °C.

主要技术指标
1、真空室尺寸：Φ500mm×H420mm。
2、整机尺寸：L2100mm×W1100mm×H1950mm。
3、整机重量：700Kg。
4、溅射方向：靶在上，样品在下。
5、磁控靶大小及数量：φ3英寸磁控靶3只。
6、样片大小及数量：φ8英寸1片。
7、电源配置：
7.1、600W；
7.2、射频电源3台；
7.3、Φ6cm考夫曼离子源电源1套。
8、抽口大小：φ150mm。
9、工艺气体：Ar、O2、N2三路。
10、极限真空度：≤6.7×10-5Pa。
11、系统漏率：≤5×10-7Pa·L/s。
12、静态升压：系统停泵关机12小时后，真空度≤5Pa。
13、抽气速率：
13.1、系统充干燥 N2解除真空，短时暴露大气后抽气至9×10-4Pa≤25min；
13.2、统充干燥 N2解除真空，短时暴露大气后抽气至6.7×10-4Pa≤35min。
14、工艺指标：
14.1、溅射不均匀性 ≤ ±5%的均匀区；
14.2、溅射距离调节范围：8-12cm；
14.3、靶角度调节精度：1°温度指标；
14.4、样片表面最高温度：600°C；
14.5、控温精度：1°C。

主要功能及特色

I. Main Functions:
1. Magnetron targets driven by RF power supplies enable RF sputtering of metals, oxides, semiconductors, ceramics and insulators. The system is supplied with three process gases—Ar, O₂, N₂—for reactive deposition of oxides and nitrides. Each target is fitted with an individual shutter for pre-sputtering and for preventing cross-contamination.
2. Sputtering modes:
2.1. Sequential multi-target sputtering with angled targets;
2.2. Co-sputtering from multiple angled targets;
2.3. Reactive sputtering of oxides and nitrides.
3. PC-based control with LCD monitor, mouse and keyboard under a Windows interface. Both automatic and manual modes are supported, allowing fully automated evacuation and process sequences.
II. Key Features:
1. Reliable vacuum and thermal performance. The chamber material and vacuum system are designed for long-term, high-frequency use: low leak rate and slow pressure rise guarantee vacuum consistency from run to run. Heating to 600 °C with ±1 °C accuracy accurately simulates film growth under various process temperatures, providing stable experimental conditions for materials research.
2. Excellent film uniformity and repeatability. Adjustable target angle, rotating substrate holder and variable target-to-substrate distance cooperate to limit thickness non-uniformity to ≤ ±5% across a 6-inch wafer—far better than conventional coaters—making the system ideal for applications demanding tight thickness and compositional control (semiconductor devices, optical coatings, etc.).
3. Compact, clean-room-friendly footprint. The horizontal cylindrical chamber fits easily into a standard clean-room bay (installed in the Class 1000 clean room on the second floor of the Optics Center). Electropolished interior surfaces are easy to clean, minimizing residual contamination and meeting laboratory cleanliness requirements.
4. Easy maintenance and scheduling. Core components (RF supplies, vacuum gauges, etc.) are highly stable and rarely fail, reducing experimental downtime.
5. Full traceability and process repeatability.Automated control records every parameter and recipe, allowing any team member to recall identical conditions, improving data reliability and comparability—essential for collaborative research and long-term projects.

一、主要功能：
1、磁控靶配备射频电源，用于金属、氧化物、半导体、陶瓷、绝缘体的射频溅射。设备配备 Ar、O2、N2三路工艺气体，可进行氧化物、氮化物的反应溅射。每个靶配有独立挡板，用于进行预溅射，同时防止靶交叉污染。
2、溅射模式：
2.1、斜靶多靶轮流溅射模式；
2.2、斜靶多靶共溅射模式；
2.3、氧化物、氮化物的反应溅射。
3、系统采用计算机控制，液晶显示屏、鼠标键盘操作，Windows 会话界面，操作简单方便，并支持自动控制和手动控制两种方式，可实现真空系统及工艺过程全自动化操作。
二、核心特点：
1、真空与温控可靠性强。腔体材质与真空系统设计满足长期高频次实验需求，漏率低、升压慢，确保不同批次实验的真空环境一致性；600℃高温加热与±1℃控温精度，可精准模拟不同工艺温度下的薄膜生长状态，为材料科学研究提供稳定的实验条件。
2、膜层均匀性与一致性。通过靶角度调节、样品台旋转、靶基距可调的协同设计，将Φ6英寸样品的溅射不均匀性控制在±5%以内，远优于常规镀膜设备，适合对膜厚精度、成分均匀性要求高的科研场景（如半导体器件、光学涂层研发）。
3、结构紧凑，环境友好。采用圆形卧式腔体结构，体积适配实验室超净室（存放于光学中心2楼超净室），无需额外占用大面积空间；腔体电化学抛光处理易清洁，减少残留污染物对后续实验的干扰，符合实验室洁净操作要求。
4、维护与预约便捷。设备核心部件（如射频电源、真空冷规单元）稳定性强，故障率低，减少因设备维护导致的实验中断。
5、数据可追溯与工艺复现性强。自动化控制方式确保工艺参数可精准记录与重复调用，不同科研人员使用时可实现相同实验条件，提升研究数据的可靠性与可比性，适合团队协作研究或长期实验项目。

主要附件及配置

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