仪器分类
Atomic layer deposition equipment (including: dry pump)_原子层沉积设备(含:干泵)
Atomic layer deposition equipment (including: dry pump)_原子层沉积设备(含:干泵)
仪器编号
2024052100102
SN序列号
KMD2312312184
生产厂家
Jiaxing Kemin Electronic Equipment Technology Co., Ltd._嘉兴科民电子设备技术有限公司
型号
TALD-200D
制造国家
China_中国
分类号
放置地点
Building C(TC-C)C-1001
购置日期
2023-07-25
入网日期
2024-09-12

主要规格及技术指标

1.Power: 380V AC, 60Hz, three-phase, 6kw
2.Substrate size: ≤6-inch wafer
3.Substrate temperature: room temperature to 500°C
4.Source heater: RT to 200°C
5.Base vacuum: < 5×10-3Torr
6.Deposition rate: 0.9 Å/cycle at 100°C and 0.0657 Torr (Al2O3)
7.Dimensions (L*W*H): 750mm*630mm*1234mm

1.功率:380V AC,60Hz,三相,6kw。
2.衬底尺寸:≤6 英寸晶圆。
3.基材温度:室温至 500°C。
4.源加热器:RT 至 200°C。
5.基础真空: < 5×10-3Torr。
6.沉积速率:0.9 Å /cycle,100°C 和 0.0657 Torr (Al2O3)。
7.尺寸(L*W*H) :750mm*630mm*1234mm。

主要功能及特色

The Kemin Electronics TALD-200D is a thermal ALD platform designed for both research and small-scale industrial production. Compliant with semiconductor safety standards (SEMI S2/S8), it delivers outstanding practicality in fields such as microelectronics and solar energy. Its key functions and features are summarized below:
I. Strong thin-film capability for diverse applications
1. Broad material set: precise, dense SnO₂, Al₂O₃, ZnO, HfO₂ and other oxide dielectrics; meets the needs of perovskite-solar-cell stacks, photonic devices, etc. Al₂O₃ uniformity ≤ ±1 % (1σ) on 6-inch wafers.
2. Flexible modes: fully automatic continuous or stop-flow recipes for both high-throughput and delicate timing control.
II. Precision temperature & vacuum systems for reliable film quality
1. Stable, accurate heating: the chuck covers all process ranges; precursor ovens and delivery lines are heated to 200 °C with high-precision control and full trace insulation, eliminating temperature drift that could disturb precursor transport or reaction, ensuring repeatable deposition.
2. Superior vacuum performance: base pressure < 5 × 10⁻³ Torr, leak rate < 5 × 10⁻⁷ Pa L s⁻¹ to minimize contamination. A U.S.-made MKS sensor spans 5 × 10⁻⁵ Torr to atmosphere at ±1 % F.S.; in-line filter and pneumatic isolation valve protect the gauge. A hot-trap on the pump fore-line adsorbs/decomposes unreacted precursor, keeping the deposition environment clean.
III. Professional yet flexible architecture—easy to expand and maintain
1. Precision gas panel: multiple heated and ambient precursor lines fitted with Swagelok high-speed ALD valves (<10 ms), stainless-steel ampoules and all-metal VCR seals; on-line purge/self-clean keeps delivery stable and maintenance simple.
2. Ready for growth: optional ozone generator (>10 g h⁻¹, >100 mg L⁻¹), extra precursor channels or full glove-box integration can be added later, letting the system evolve with your research or production needs.
IV. Smart control & comprehensive safety for worry-free operation
1. Intelligent, efficient operation: high-precision PLC + industrial-PC control with graphical HMI gives a live view of every subsystem, letting users adjust temperature, flow, etc. on the fly; recipes can be created, stored and recalled, and full run logs are kept for traceability.
2. Full-coverage safety: three-tier user access prevents unauthorized changes; hardware and software interlocks, anomaly alarms and emergency stop are built-in; electrical design meets CE and SEMI S2/S8 standards, safeguarding both equipment and personnel.
V. Thoughtfully engineered for easy deployment in any setting
1. Modular architecture with a detachable sample platen that holds wafers up to 200 mm yet still accommodates small pieces. The compact footprint fits on a lab bench or in a mini-fab, and the frame can be re-oriented to match any floor-plan requirement.

科民电子TALD - 200D作为适配科研与小型化工业量产的原子层沉积设备,遵循半导体行业安全标准,在微电子、太阳能电池等领域实用性极强,其主要功能和特色整理如下:
一、薄膜沉积能力强,适配多元场景
1、可沉积膜层丰富:能精准制备SnO₂、Al₂O₃等多种氧化物薄膜,还可实现ZnO、HfO₂等多种高质量介质薄膜的沉积,可满足钙钛矿太阳能电池膜层制备、光电器件研发等不同场景的需求,且制备的薄膜致密性和均匀性出色,6英寸晶圆上沉积氧化铝的膜厚标准偏差可≤±1%。
2、沉积模式灵活:支持连续模式与停流模式两种全自动运行模式,既能适配常规薄膜的高效沉积,也能满足特殊材料沉积时对工艺节奏的精细调控,适配不同的沉积工艺需求。
二、控温与真空系统精密,保障沉积质量
1、控温精准稳定:样品台加热温度适配多种工艺需求,前驱体源装置及输运管路最大加热温度可达200℃,温度控制精度高。同时管路配置保温隔热功能,能避免温度波动影响前驱体传输和反应效果,保障薄膜沉积的稳定性。
2、真空性能优异:整机极限真空<5×10⁻³Torr,真空漏率小于5×10⁻⁷Pa·L/s,可减少杂质对沉积过程的干扰。搭配美国MKS压力传感器,测量范围覆盖5E - 5Torr至大气压,精度达满量程的±1%,还在真空计前设有高效过滤网和气动隔膜阀,能有效保护真空计。此外真空泵前级配置热阱,可吸附分解未反应的前驱体,进一步保障沉积环境洁净。
三、配置专业且灵活,扩展维护便捷
1、管路与阀门配置专业:标配多路加热前驱体源管路与常温源管路,配备Swagelok快速高温ALD专用阀门,响应时间<10ms,还搭配不锈钢源瓶,管路采用金属VCR密封,且具有在线清洗功能,既保障了前驱体传输的稳定性,也方便后续维护清洁。
2、扩展性强:支持选配臭氧系统等部件,臭氧产量可超10g/h、浓度超100mg/L;同时支持扩展前驱体源管路数量,还能集成到手套箱上,适配更多特殊工艺场景,可根据后续科研或生产需求灵活升级。
四、智能控制+多重防护,操作安全省心
1、操作智能高效:搭载高精度PLC+工控机自动控制系统,配备图形化操作界面,可直观显示设备各部分运行状态,方便操作人员调节温度、流量等参数,还能编辑、保存工艺配方,同时具备运行状态历史记录功能。
2、安全保障到位:设置三级用户权限分配机制,避免非授权操作。同时具备软硬件互锁、异常报警和紧急停机功能,且电气符合CE标准,遵循SEMI - S2、S8等半导体行业安全标准,能全方位保障设备运行和操作人员的安全。
五、结构设计合理,适配多场景部署
1、设备采用模块化设计,样品台配有可拆卸载板,可放置最大直径200mm的样品,同时兼容小尺寸样品。整体结构紧凑,便于在实验室或小型生产车间摆放,且能根据使用场景灵活调整安装方式,适配不同的场地布局需求。

主要附件及配置

公告名称 公告内容 发布日期