主要规格及技术指标

功率 380V AC，60Hz，三相，6kw
衬底尺寸 6 英寸晶圆
基材温度
室温至 500°C
源加热器 RT 至 200°C
沉积速率 1.2 Å /周期，200°C 和 0.2Torr （Al2O3）
带触摸屏的控制路线 Labview
源瓶 3 号
基础真空 < 5×10 -3Torr

气动阀
用于 ALD 的世伟洛克隔膜阀，响应时间 5ms
尺寸（长*宽*高） 750mm*630mm*1234mm

Power 380V AC, 60Hz, three-phase, 6kw
Size of the substrate 6” wafer
Temperature of the substrate
RT to 500℃
Source Heater RT to 200℃
Deposition Rate 1.2 Å /cycle at 200℃ and 0.2Torr (Al2O3)
Control route Labview with Touch Screen
Source Bottle Number 3
Base Vacuum < 5×10 -3Torr

Pneumatic valve
Swagelok Diaphragm Valves for ALD, Response time 5ms
Size(L*W*H) 750mm*630mm*1234mm

主要功能及特色

原子层沉积（ALD）是基于连续的气相表面反应，获得纳米级的、具有非常好的保型性和工艺可控性的单层或多层薄膜。使用自限制的反应方式，ALD 设备已沉积出种类广泛的材料。由嘉兴科民电子设备技术有限公司生产的 T-ALD 等离子增强型原子层沉积系统具备均匀的加热，高精度的控制和广泛的应用。我们亦提供多样的薄膜沉积技术解决方案。
Atomic layer deposition (ALD) is based on continuous vapor phase surface reactions to obtain nanoscale monolayer or multilayer films with very good form retention and process controllability. Using a self-limiting reaction approach, ALD equipment has deposited a wide range of materials. The T-ALD plasma-enhanced ALD ALD system produced by Jiaxing Kemin Electronic Equipment Technology Co., Ltd. has uniform heating, high-precision control and a wide range of applications. We also offer a wide range of thin film deposition technology solutions.

主要附件及配置

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