主要规格及技术指标

1.功率：380V AC，60Hz，三相，6kw
2.衬底尺寸：≤6 英寸晶圆
3.基材温度：室温至 500°C
4.源加热器：RT 至 200°C
5.基础真空： < 5×10-3Torr
6.沉积速率：0.9 Å /cycle，100°C 和 0.0657 Torr （Al2O3）
7.尺寸(L*W*H) ：750mm*630mm*1234mm

1.Power: 380V AC, 60Hz, three-phase, 6kw
2.Substrate size: ≤6-inch wafer
3.Substrate temperature: room temperature to 500°C
4.Source heater: RT to 200°C
5.Base vacuum: < 5×10-3Torr
6.Deposition rate: 0.9 Å/cycle at 100°C and 0.0657 Torr (Al2O3)
7.Dimensions (L*W*H): 750mm*630mm*1234mm

主要功能及特色

原子层沉积（ALD）是基于连续的气相表面反应，获得纳米级的、具有非常好的保型性和工艺可控性的单层或多层薄膜。使用自限制的反应方式，ALD 设备已沉积出种类广泛的材料。由嘉兴科民电子设备技术有限公司生产的 T-ALD 等离子增强型原子层沉积系统具备均匀的加热，高精度的控制和广泛的应用。我们亦提供多样的薄膜沉积技术解决方案。
Atomic layer deposition (ALD) is based on continuous vapor phase surface reactions to obtain nanoscale monolayer or multilayer films with very good form retention and process controllability. Using a self-limiting reaction approach, ALD equipment has deposited a wide range of materials. The T-ALD plasma-enhanced ALD ALD system produced by Jiaxing Kemin Electronic Equipment Technology Co., Ltd. has uniform heating, high-precision control and a wide range of applications. We also offer a wide range of thin film deposition technology solutions.

主要附件及配置

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