主要规格及技术指标

Dimensions: W820mm x H620mm x D710mm
Chip size: Compatible with 3, 4, 6-inch wafers (compatible with multi-wafer mode)
Temperature range: 800℃ (Thermocouple) 800℃ to 1250℃ (Pyrometer) Heating rate: < 30℃/sec for graphite susceptor Temperature uniformity: ±1%
Vacuum level: 1000 SCCM N2 gas flow, pressure less than 10 Torr

设备外观：W820mm x H620mm x D710mm
芯片尺寸：兼容 3、4、6 吋 1 片(向下晶圆兼容多片模式)
温度使用范围：800℃(Thermocouple) 800℃~1250℃(Pyrometer)
升温速率：< 30℃/sec for 石墨载盘
温度均匀性：±1%
真空度: 1000 SCCM 流量通 N2 气体，压力小于 10 Torr。

主要功能及特色

The RTP-T150M is a rapid thermal processing equipment for 6-inch wafers, using infrared halogen lamps as the heat source. It employs upper and lower layer synchronous radiation heating to achieve uniform thermal processing of the products. The reaction chamber is designed with a heated wall concept, with the product edges isolated by a quartz chamber and an outer water-cooled aluminum alloy casing. The machine control is achieved through a PC-based controller, with a graphical window interface under the Windows system, providing convenient, simple, and flexible control characteristics.

RTP-T150M 为处理 6 吋晶圆的快速热制程设备，以红外线卤素灯管为热 源，分由上、下层同步辐射加热制品从而达到均匀的热处理制程，反应腔 体采暖壁式的设计理念，制品外缘由石英腔体隔绝，再外则为水冷铝合金 外罩。机台操控为 PC-based 控制器，Windows 系统下架构图形窗口接口而 有方便、简易及弹性的操控特性。

主要附件及配置

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