测量范围:
1.电阻率:10-5~105Ω.cm(可扩展);
2.电导率:10-5~105s/cm;
3.电阻:10-5~105Ω
4.可测晶片厚度≤3mm
5.可测晶片直径 140mmX150mm(配S-2A型测试台); 200mmX200mm(配S-2B型测试台); 400mmX500mm(配S-2C型测试台);
6.恒流源电流量程分为1μA、10μA、100μA、1mA、10mA、100mA六档
7.分辨力:10μV;
8.输入阻抗>1000MΩ;
9.精度:±0.1% ;
10.四探针探头基本指标间距:1±0.01mm;
11.针间绝缘电阻:≥1000MΩ;
12.机械游移率:≤0.3%;
13.探针:碳化钨或高速钢Ф0.5mm;
14.探针压力:5~16 牛顿(总力)
Measurement Range:
1. Resistivity: 10⁻⁵ to 10⁵ Ω·cm (expandable);
2. Conductivity: 10⁻⁵ to 10⁵ S/cm;
3. Resistance: 10⁻⁵ to 10⁵ Ω;
4. Measurable Wafer Thickness: ≤3mm;
5. Measurable Wafer Diameter:
- 140mm × 150mm (with S-2A test stand);
- 200mm × 200mm (with S-2B test stand);
- 400mm × 500mm (with S-2C test stand);
6. Constant Current Source Ranges:
Six ranges—1μA, 10μA, 100μA, 1mA, 10mA, 100mA
7. Resolution: 10μV;
8. Input Impedance: >1000MΩ;
9. Accuracy: ±0.1%;
10. Four-Point Probe Basic Specifications:
Spacing: 1±0.01mm;
11. Inter-Pin Insulation Resistance: ≥1000MΩ;
12. Mechanical Drift Rate: ≤0.3%;
13. Probe Material: Tungsten Carbide or High-Speed Steel, Ф0.5mm;
14. Probe Pressure: 5 to 16 Newtons (total force).
RTS-9型双电测四探针测试仪采用了四探针双电测组合(亦称双位组合)测量新技术,将范德堡测量方法推广应用到直线四探针上,利用电流探针、电压探针的变换,在计算机控制下进行两次电测量,把采集到的数据在计算机中加与分析,能自动消除样品几何尺寸、边界效应以及探针不等距和机械游移等因素对测量结果的影响。因而每次测量不必知道探针间距、样品尺寸及探针在样品表面上的位置。由于每次测量都是对几何因素的影响进行动态的自动修正,因此显著降低了几何因素影响,从而提高了测量结果的准确度。
The RTS-9 Dual Electrical Measurement Four-Point Probe Tester employs a novel measurement technique known as the four-point probe dual electrical measurement combination (also referred to as the dual-position combination). This technique extends the Van der Pauw measurement method to linear four-point probes. By alternating the current and voltage probes and performing two electrical measurements under computer control, the collected data is analyzed within the computer. This process automatically eliminates the influence of sample geometric dimensions, boundary effects, probe non-equidistance, and mechanical drift on the measurement results. Consequently, there is no need to know the probe spacing, sample dimensions, or the position of the probes on the sample surface for each measurement. Since each measurement dynamically and automatically corrects for geometric factors, the influence of these factors is significantly reduced, thereby enhancing the accuracy of the measurement results.
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