主要规格及技术指标

1. Sample stage size: standard 8-inch chamber with a diameter of 200 mm.
2. Base vacuum of the equipment is better than 3 Pa; leak rate ≤ 5 * 10^(-10) Pa⋅m3/s.
3. Sample stage heating temperature up to 400°C, using PID control with a precision of ±1°C.

1. 样品台尺寸：标准8英寸腔体，直径为200mm
2. 设备本底真空优于3 Pa；设备漏率≤5*10^(-10) Pa·m3/s
3. 样品台加热温度最高可达400℃，采用PID控制方式，控制精度为±1℃

主要功能及特色

1. Suitable for thin film deposition on 8-inch and smaller samples, using trimethylaluminum + water as precursors. Multiple deposition modes: rapid mode, full exposure mode, and multi-doping mode.
2. Reaction chamber material is 316L stainless steel, with the base processed from a single block and the chamber surface polished and electrolyzed, dove-tail groove sealing with corrosion-resistant sealing rings. The reaction chamber is equipped with automatic gas charging and overpressure protection functions.
3. Control method: PLC + touch screen. PLC uses industrial Ethernet control, supporting flexible expansion of communication methods such as DeviceNet, CANopen, and PROFIBUS DP, touch screen size no less than 15.6 inches.
4. The system enables recipe editing, saving, and reading functions; all ALD valves have automatic emptying functions, and all pipelines have automatic cleaning functions. The system features an advanced interface for temperature PID parameter self-tuning and precursor label modification.
5. The system can monitor power gas pressure values, system pressure values, heating status, valve switch status, and coating progress in real-time, triggering alarms and responding when abnormalities occur, alarm logs can be reviewed.

1. 适用于8英寸以及小尺寸样品薄膜沉积，前驱体为三甲基铝+水，多种沉积模式：快速模式、充分暴露模式和多元掺杂模式。
2. 反应腔材质为316L不锈钢，底座整块材料加工，腔体表面抛光后电解，采用燕尾槽密封并配备耐腐蚀密封圈，配备自动充气及过压保护功能
3. 控制方式：PLC+触摸屏，PLC采用以太网控制方式，支持灵活扩展Device、CANopen、PROFIBUS DP等通信方式，触摸屏不小于15.6英寸
4. 系统可实现配方编辑、保存、读取等功能，所有ALD阀门具备自动排空功能，所有管线具备自动清洗功能。系统设有高级界面，可进行温度PID参数自整定、前驱体标签修改等。
5. 系统可实时显示动力气体压力值、系统压力值、加热状态、阀门开关状态、镀膜进度等；当发生异常时触发报警并作出响应，报警日志可进行回看。

主要附件及配置

1. One set of thermal ALD equipment host. Pipelines and joints are made of 316EP grade electrolytically polished stainless steel. All gas pipeline connections use metal VCR seals. Carrier gas pipelines use N2 or Ar gas, controlled by mass flow controllers, equipped with an inert gas self-cleaning system, allowing automatic cleaning times to be set in the control interface.
2. One 8-inch reaction chamber.
3. One set of room-temperature liquid source pipelines, equipped with a three-port ALD valve (response time < 5 ms)
4. Two sets of heated source pipelines, pipeline heating temperature range: RT-250°C, with a control precision of ±1°C. Heated source equipped with a three-port ALD valve (response time < 5 ms, with a built-in 1/8-inch heater in the valve body, temperature range RT-200°C).
5. One heat trap for adsorbing residual precursor sources with a temperature range of RT-300°C and a control precision of ±1°C..
6. One mechanical pump with a pumping speed of no less than 20 m³/h, equipped with an imported pressure sensor with a detection range of 5 * 10^(-4) to 1000 mbar. And the vacuum extraction pipeline can be baked up to 150°C.

1. 1套热型原子层沉积设备主机，管路及接头均采用316EP级电解抛光不锈钢材料，所有气体管路连接处采用金属VCR密封；载气管路采用N2或Ar气体，通过质量流量控制器控制；配备惰性气体自清洗系统，在控制界面可以设置自清洗次数
2. 1套8寸反应腔
3. 1套常温液源管路，配备三孔ALD阀门（响应时间＜5ms）
4. 2套加热源管路，管路加热温度范围RT-250℃，控制精度±1℃，热源配备三孔ALD阀门（响应时间＜5ms，阀体内置直径为1/8英寸加热器，控温范围RT-200℃）
5. 1套用于吸附残留前驱体的热肼，温度范围RT-300℃，控制精度±1℃
6. 1套机械泵，抽速不低于20m3/h，配备进口压力传感器，检测范围5*10-4~1000mbar，真空管道可以烘烤至150℃