仪器分类
1. Testable materials:
1) Semiconductor materials: SiGe, SiC, InAs, InGaAs, InP, AlGaAs, HgCdTe, and ferrite materials, etc.;
2) Low-resistance materials: metals, transparent oxides, weakly ferromagnetic semiconductor materials, TMR materials, etc.;
3) High-resistance materials: semi-insulating GaAs, GaN, CdTe, etc.
2. The standard configuration can simultaneously measure 2 samples at once, and with the increase of options (adding a matrix card), it can measure 4 samples at once;
1) Small size sample cards can accommodate a maximum sample area of 12×12mm² (standard with 10 pieces);
2) Large size sample cards can accommodate a maximum sample area of 50×50mm² (standard with 10 pieces);
3) Probe sample cards can measure sample sizes ranging from 1×1mm² to 30×30mm² (optional).
3. Wide resistance measurement range: 0.1mΩ—100GΩ (high voltage wide resistance system);
4. Maximum magnetic field: 2T.
1. 可测试材料:
1)半导体材料:SiGe, SiC, InAs, InGaAs, InP, AlGaAs, HgCdTe和铁氧体材料等;
2)低阻抗材料:金属、透明氧化物、弱磁性半导体材料、TMR材料等;
3)高阻抗材料:半绝缘的GaAs, GaN, CdTe等
2.标准配置一次可以同时测量2个样品,增加选件(增加一块矩阵卡)可同时测量4个样品;
1)小尺寸样品卡可放置样品最大面积为12×12mm2(标配10个);
2)大尺寸样品卡可放置样品最大面积为50×50mm2(标配10个);
3)探针样品卡可测样品尺寸范围为1×1mm2 ~ 30×30mm2(选件)。
3.电阻测量范围宽:0.1mΩ—100GΩ(高电压宽电阻系统);
4.最大磁场:2T
The Hall Effect ET9207 series electrical transport property testing system is a fully automated testing system that integrates Hall effect, magnetoresistance, and I-V characteristics testing. It can measure Hall effect, I-V characteristics, R-T characteristics, and R-H characteristics; it can derive parameters: sheet resistance, resistivity, Hall coefficient, Hall mobility, carrier concentration, and conductivity type; it can plot curves: I-V characteristics - I-V characteristic curves under different magnetic fields and temperatures; R-T characteristics - resistance versus temperature characteristic curve at a fixed magnetic field; R-H characteristics - resistance versus magnetic field characteristic curve at a fixed temperature.
霍尔效应ET9207系列电输运性质测试系统是集霍尔效应、磁阻、I-V特性等测试于一体的全自动化测试系统。可以进行霍尔效应、I-V特性、R-T特性和R-H特性的测量;可得出参数:方块电阻、电阻率、霍尔系数、霍尔迁移率、载流子浓度和导电类型;可绘制曲线:I-V特性——不同磁场和不同温度下的I-V特性曲线;R-T特性——固定磁场,电阻随着温度变化的特性曲线;R-H特性——固定温度,电阻随着磁场变化的特性曲线。
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